smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 FMMT596 features sot23 pnp silicon planar absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -220 v collector-emitter voltage v ceo -200 v emitter-base voltage v ebo -5 v peak collector current i cm -1 a collector current i c -0.3 a base current i b -200 ma power dissipation p tot 500 mw operating and storage temperature range t j, t stg -55to+150 smd type transistors smd type transistors smd type ic smd type transistors smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type ic smd type smd type ic smd type smd type ic smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type s m d ty p e i c t r a n s i s t o r s m d ty p e smd type smd type smd type smd type smd type product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type transistors marking marking 596 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a -220 v collector-emitter breakdown voltage * v (br)ceo i c =-10ma -200 v emitter-base breakdown voltage v (br)ebo i e =-100a -5 v collector cutoff current i cbo v cb =-200v -100 na collector-emitter cut-off current i ces v ce =-200v -100 na emitter cut-off current i ebo v eb =-4v -100 na i c =-100ma, i b =-10ma -0.2 v i c =-250ma, i b =-25ma -0.35 v base-emitter saturation voltage * v be( sat) i c =-250ma, i b =-25ma -1.0 v base-emitter voltage * v be(on) i c =-250ma,v ce =-10v -0.9 v i c =-1ma, v ce =-10v 100 i c =-100ma,v ce =-10v* 100 i c =-250ma,v ce =-10v* 85 300 i c =-400ma,v ce =-10v* 35 current-gain-bandwidth product f t i c =-50ma,v ce =-10v,f=100mhz 150 mhz output capacitance c obo v cb =-10v,f=1mhz 10 pf * pulse test: tp = 300 s; d 0.02. collector-emitter saturation voltage * v ce( sat) h fe static forward current transfer ratio smd type transistors FMMT596 smd type transistors smd type transistors smd type ic smd type transistors smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type ic smd type smd type ic smd type smd type ic smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type s m d ty p e i c t r a n s i s t o r s m d ty p e smd type smd type smd type smd type smd type product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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